Hybrid molecular beam epitaxy growth of BaTiO3 films
نویسندگان
چکیده
منابع مشابه
Growth of nanoscale BaTiO3/SrTiO3 superlattices by molecular-beam epitaxy
Same as Report (SAR) 18. NUMBER
متن کاملCharacterization of Multiferroic Thin Films Generated with Molecular Beam Epitaxy
Magnetoelectric multiferroic thin films exhibit coupled ferromagnetism and ferroelectricity. Interest in these multiferroics stems from their potential applications in spin-based computing and novel information storage methods. Through characterization with x-ray diffraction (XRD), atomic force microscopy (AFM), and vibrating sample magnetometry (VSM), the growth of multiferroic films with mole...
متن کاملCharacterization of Multiferroic Thin Films Generated with Molecular Beam Epitaxy
Magnetoelectric multiferroic thin films exhibit coupled ferromagnetism and ferroelectricity. Interest in these multiferroics stems from their potential applications in spin-based computing and novel information storage methods. Through characterization with x-ray diffraction (XRD), atomic force microscopy (AFM), and vibrating sample magnetometry (VSM), the growth of multiferroic films with mole...
متن کاملA review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications
SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compoun...
متن کاملHigh-mobility thin InSb films grown by molecular beam epitaxy
The problem of preparing high-mobility thin InSb films is revisited for magnetoresistive and spintronic sensor applications. We introduce a growth process that significantly improves the electrical properties of thin unintentionally doped InSb layers ~60–300 nm! epitaxially grown on GaAs~100! substrates by reducing the density of dislocations within the interfacial layer. The epilayer propertie...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A
سال: 2021
ISSN: 0734-2101,1520-8559
DOI: 10.1116/6.0001140